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40 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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40 V, N-channel Trench MOSFET
40 V, N-channel Trench MOSFET
| Part | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs(th) (Max) | Input Capacitance (Ciss) (Max) | Grade | Current - Continuous Drain (Id) (Ta) | Qualification | Package / Case | Operating Temperature (Min) | Operating Temperature (Max) | Package Name | Mounting Type | Rds On (Max) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | FET Type | Vgs (Max) | Technology | Gate Charge (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 10 V | 4.5 V | 2.5 V | 180 pF | Automotive | 3 A | AEC-Q101 | SC-59 SOT-23-3 TO-236-3 | -55 °C | 175 °C | TO-236AB | Surface Mount | 75 mOhm | 40 V | 7.5 W 615 mW | N-Channel | 20 V | MOSFET (Metal Oxide) | 5 nC 5 nC |