MOSFET N-CH 20V 1.2A UFM
| Part | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Vgs (Max) | Mounting Type | Operating Temperature | Power Dissipation (Max) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Rds On (Max) @ Id, Vgs | FET Type | Current - Continuous Drain (Id) @ 25°C | Technology | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 36 pF | UFM | 20 V | Surface Mount | 150 °C | 500 mW | 4 V | 10 V | 310 mOhm | N-Channel | 1.2 A | MOSFET (Metal Oxide) | 2.3 V | 20 V |