DMT69M5LFVW Series

60V N-Channel Enhancement Mode MOSFET

Catalog

60V N-Channel Enhancement Mode MOSFET

Part	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Technology	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs
Diodes Inc DMT69M5LFVW-13	2.5 V	1406 pF	8-PowerVDFN	MOSFET (Metal Oxide)	2.74 W 20.5 W	-55 °C	150 °C	Surface Mount Wettable Flank	N-Channel	60 V	PowerDI3333-8 (SWP) Type UX	20 V	14.8 A 40.6 A	4.5 V 10 V	28.4 nC	8.3 mOhm

Catalog

60V N-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switching (UIS) Test in Production— Ensures More Reliable and Robust End Application

• Low On-Resistance

• Small Form Factor Thermally Efficient Package Enables Higher Density End Products

• Wettable Flank for Improved Optical Inspection

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, andmanufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications.