SST38VF6401B Series

Catalog

2.7V TO 3.6V 64MBIT PM PARALLEL ADVANCED MPF 48 TFBGA 6X8X1.2MM T/R ROHS COMPLIANT: YES

Part	Write Cycle Time - Word, Page	Mounting Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Supplier Device Package	Memory Organization	Memory Type	Operating Temperature [Max]	Operating Temperature [Min]	Memory Size	Package / Case	Access Time	Memory Format	Technology	Memory Interface	Package / Case [y]	Package / Case [y]
Microchip Technology SST38VF6401BT-70I/CD	10 µs	Surface Mount	2.7 V	3.6 V	48-TFBGA (6x8)	4M x 16	Non-Volatile	85 °C	-40 °C	64 Gbit	48-TFBGA	70 ns	FLASH	FLASH	Parallel
Microchip Technology SST38VF6401B-70I/CD	10 µs	Surface Mount	2.7 V	3.6 V	48-TFBGA (6x8)	4M x 16	Non-Volatile	85 °C	-40 °C	64 Gbit	48-TFBGA	70 ns	FLASH	FLASH	Parallel
Microchip Technology SST38VF6401B-70I/TV	10 µs	Surface Mount	2.7 V	3.6 V	48-TSOP	4M x 16	Non-Volatile	85 °C	-40 °C	64 Gbit	48-TFSOP	70 ns	FLASH	FLASH	Parallel	18.4 mm	0.724 in

Catalog

Key Features

• * Organized as 4M x16

• * Single Voltage Read and Write Operations– 2.7-3.6V

• * Superior Reliability– Endurance: 100,000 Cycles minimum– Greater than 100 years Data Retention

• * Low Power Consumption (typical values at 5 MHz)– Active Current: 25 mA (typical)– Standby Current: 5 µA (typical)– Auto Low Power Mode: 5 µA (typical)

• * 128-bit Unique ID

• * Security-ID Feature– 248 Word, user One-Time-Programmable

• * Protection and Security Features– Hardware Boot Block Protection/WP# Input Pin, Uniform(32 KWord) and Non-Uniform (8 KWord) optionsavailable– User-controlled individual block (32 KWord) protection,using software only methods– Password protection

• * Hardware Reset Pin (RST#)

• * Fast Read and Page Read Access Times:– 70 ns Read access time– 25 ns Page Read access times- 8-Word Page Read buffer

• * Latched Address and Data

• * Fast Erase Times:– Block-Erase Time: 18 ms (typical)– Chip-Erase Time: 40 ms (typical)

• * Erase-Suspend/-Resume Capabilities

• * Fast Word and Write-Buffer Programming Times:– Word-Program Time: 7 µs (typical)– Write Buffer Programming Time: 1.75 µs / Word (typical)- 16-Word Write Buffer

• * Automatic Write Timing– Internal VPP Generation

• * End-of-Write Detection– Toggle Bits– Data# Polling– RY/BY# Output

• * CMOS I/O Compatibility

• * JEDEC Standard– Flash EEPROM Pinouts and command sets

• * CFI Compliant

• * Packages Available– 48-lead TSOP– 48-ball TFBGA

• * All non-Pb (lead-free) devices are RoHS compliant

Description

The SST38VF6401B/6402B/6403B/6404B are 4M x16 CMOS Advanced Multi-Purpose Flash Plus (Advanced MPF+) devices manufactured with SST proprietary, high-performance CMOS Super- Flash technology. The split-gate cell design and thick-oxide tunneling injector attain better reliability and manufacturability compared with alternate approaches. The SST38VF6401B/6402B/6403B/6404B write (Program or Erase) with a 2.7-3.6V power supply. This device conforms to JEDEC standard pin assignments for x16 memories. Please see documents section for the Silicon Errata for this device.