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30 V, N-channel Trench MOSFET
Description
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N-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Current - Continuous Drain (Id) (Tc) | Current - Continuous Drain (Id) (Ta) | Package / Case | Operating Temperature (Min) | Operating Temperature (Max) | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Gate Charge (Max) | Package Name | FET Type | Rds On (Max) | Vgs(th) (Max) | Technology | Input Capacitance (Ciss) (Max) | Mounting Type | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 10 V | 4.5 V | 62 A | 12.7 A | 8-PowerVDFN | -55 °C | 150 °C | 30 V | 1.7 W 40.3 W | 24.8 nC | MLPAK33 | N-Channel | 6.7 mOhm | 2.2 V | MOSFET (Metal Oxide) | 1150 pF | Surface Mount | 20 V |