IR MOSFET™ N-CHANNEL ; D2PAK TO-263 PACKAGE; 13.9 MOHM;
| Part | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Vgs(th) (Max) @ Id | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | MOSFET (Metal Oxide) | 3180 pF | -55 °C | 175 ░C | 140 W | 10 V | 61 A | Surface Mount | 13.9 mOhm | 100 V | 4 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 87 nC | 20 V | N-Channel |