DIODE SIL CARB 1.2KV 33A TO220-2
| Part | Technology | Capacitance @ Vr, F | Voltage - Forward (Vf) (Max) @ If | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Current - Average Rectified (Io) | Mounting Type | Package / Case | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Reverse Recovery Time (trr) | Speed |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Wolfspeed | SiC (Silicon Carbide) Schottky | 754 pF | 1.8 V | TO-220-2 | 1.2 kV | 250 µA | 33 A | Through Hole | TO-220-2 | 175 ░C | -55 C | 0 ns | No Recovery Time |
Wolfspeed | SiC (Silicon Carbide) Schottky | 754 pF | 1.8 V | TO-247-2 | 1.2 kV | 250 µA | 31.5 A | Through Hole | TO-247-2 | 175 ░C | -55 C | 0 ns | No Recovery Time |
Wolfspeed | SiC (Silicon Carbide) Schottky | 754 pF | 1.8 V | TO-252-2 | 1.2 kV | 250 µA | 33 A | Surface Mount | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 175 ░C | -55 C | 0 ns | No Recovery Time |