DIODE SIL CARB 1.2KV 33A TO220-2
| Part | Technology | Capacitance @ Vr, F | Voltage - Forward (Vf) (Max) @ If | Supplier Device Package | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Reverse Leakage @ Vr | Current - Average Rectified (Io) | Mounting Type | Package / Case | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Reverse Recovery Time (trr) | Speed | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Wolfspeed  | SiC (Silicon Carbide) Schottky  | 754 pF  | 1.8 V  | TO-220-2  | 1.2 kV  | 250 µA  | 33 A  | Through Hole  | TO-220-2  | 175 ░C  | -55 C  | 0 ns  | No Recovery Time  | 
Wolfspeed  | SiC (Silicon Carbide) Schottky  | 754 pF  | 1.8 V  | TO-247-2  | 1.2 kV  | 250 µA  | 31.5 A  | Through Hole  | TO-247-2  | 175 ░C  | -55 C  | 0 ns  | No Recovery Time  | 
Wolfspeed  | SiC (Silicon Carbide) Schottky  | 754 pF  | 1.8 V  | TO-252-2  | 1.2 kV  | 250 µA  | 33 A  | Surface Mount  | DPAK (2 Leads + Tab)  SC-63  TO-252-3  | 175 ░C  | -55 C  | 0 ns  | No Recovery Time  |