Beta
⌘K
MOSFET N-CH 100V 160A TO220SM
| Part | Input Capacitance (Ciss) (Max) @ Vds | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | FET Type | Vgs (Max) | Supplier Device Package | Package / Case | Mounting Type | Power Dissipation (Max) [Max] | Rds On (Max) @ Id, Vgs | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 11500 pF | MOSFET (Metal Oxide) | 160 A | 3.5 V | 184 nC | 6 V 10 V | 100 V | N-Channel | 20 V | TO-220SM(W) | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | Surface Mount | 375 W | 1.92 mOhm | 175 °C |