TRANS PREBIAS NPN 50V 0.1A SMINI
| Part | Resistor - Emitter Base (R2) | Resistor - Base (R1) | Power - Max [Max] | Vce Saturation (Max) @ Ib, Ic | Transistor Type | Current - Collector (Ic) (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Package / Case | Voltage - Collector Emitter Breakdown (Max) [Max] | Supplier Device Package | Mounting Type | Current - Collector Cutoff (Max) [Max] | Frequency - Transition |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 4700 Ohms | 10 kOhms | 200 mW | 300 mV | NPN - Pre-Biased | 100 mA | 30 | SC-59 SOT-23-3 TO-236-3 | 50 V | S-Mini | Surface Mount | 500 nA | 250 MHz |