UF3C065040K4S Series

Silicon Carbide (SiC) Cascode JFET - EliteSiC, 42 mohm, 650V, TO-247-4L

Catalog

Silicon Carbide (SiC) Cascode JFET - EliteSiC, 42 mohm, 650V, TO-247-4L

Part	Gate Charge (Max)	Power Dissipation (Max)	Package Name	FET Type	Input Capacitance (Ciss) (Max)	Rds On (Max)	Drive Voltage (Max Rds On, Min Rds On)	Technology	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Vgs (Max)	Drain to Source Voltage (Vdss)	Package / Case	Mounting Type	Operating Temperature (Min)	Operating Temperature (Max)
ON Semiconductor UF3C065040K4S	43 nC	326 W	TO-247-4	N-Channel	1500 pF	52 mOhm	12 V	SiCFET (Cascode SiCJFET)	54 A 54 A	6 V	25 V	650 V	TO-247-4	Through Hole	-55 °C	175 °C

Catalog

Silicon Carbide (SiC) Cascode JFET - EliteSiC, 42 mohm, 650V, TO-247-4L

Key Features

• On-resistance RDS(on)

• Maximum operating temperature: 175 °C

• Excellent Reverse Recover

• Low Gate Charge

Description

EliteSiC Cascode JFETs combine a normally-on SiC JFET with a Si MOSFET to create a normally-off device in a cascode circuit configuration, offering superior switching performance and reliability. Benefits include high efficiency, faster frequency, increased power density, reduced EMI, and smaller system size. These devices support standard gate drivers, simplifying the replacement of Si IGBTs and superjunction devices. Ideal for switching inductive loads