Beta
⌘K
POWER MOSFET, N CHANNEL, 30 V, 18 A, 0.0039 OHM, SOIC, SURFACE MOUNT
| Part | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Package / Case [y] | Package / Case [x] | FET Type | Power Dissipation (Max) | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Supplier Device Package | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2.35 V | 18 A | 4.5 V 10 V | 20 V | 26 nC | Surface Mount | 4.8 mOhm | 2315 pF | 8-SOIC | 3.9 mm | 0.154 in | N-Channel | 2.5 W | MOSFET (Metal Oxide) | -55 °C | 150 °C | 8-SO | 30 V |