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OPTIMOS™ 5 N-CHANNEL POWER MOSFET 100 V ; TO-220 PACKAGE; 2.3 MOHM;
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Mounting Type | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Technology | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Power Dissipation (Max) [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Package / Case | Vgs(th) (Max) @ Id | Supplier Device Package | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 210 nC | 20 V | Through Hole | 2.3 mOhm | 100 V | 120 A | MOSFET (Metal Oxide) | 15600 pF | 6 V 10 V | N-Channel | 375 W | -55 °C | 175 ░C | TO-220-3 | 3.8 V | PG-TO220-3 | |
Infineon Technologies | 120 nC | 20 V | Through Hole | 2.3 mOhm | 40 V | 90 A | MOSFET (Metal Oxide) | 10000 pF | 10 V | N-Channel | -55 °C | 175 ░C | TO-220-3 | 4 V | PG-TO220-3 | 167 W | |
Infineon Technologies | 166 nC | 20 V | Through Hole | 2.3 mOhm | 80 V | 120 A | MOSFET (Metal Oxide) | 12100 pF | 6 V 10 V | N-Channel | 300 W | -55 °C | 175 ░C | TO-220-3 | 3.8 V | PG-TO220-3 |