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IR MOSFET™ N-CHANNEL POWER MOSFET ; SUPERSO8 5X6 PACKAGE; 2.6 MOHM;
| Part | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Vgs (Max) | Rds On (Max) @ Id, Vgs | Technology | Mounting Type | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | FET Type | Package / Case | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 8-PQFN (5x6) | -55 °C | 150 °C | 3.6 W 156 W | 20 V | 2.6 mOhm | MOSFET (Metal Oxide) | Surface Mount | 110 nC | 10 V | 28 A 100 A | 40 V | N-Channel | 8-PowerVDFN | 4 V | 4490 pF |