Beta
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IR MOSFET™ N-CHANNEL POWER MOSFET ; PQFN 2 X 2 PACKAGE; 13 MOHM;
| Part | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs [Max] | Rds On (Max) @ Id, Vgs [Max] | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 2.35 V | 10.4 nC | 13 mOhm | MOSFET (Metal Oxide) | -55 °C | 150 °C | 9.9 A 21 A | 2.1 W | 653 pF | 20 V | N-Channel | 25 V | 4.5 V 10 V | Surface Mount | 6-PowerVDFN |