DMTH4001SPSQ Series

NRND = Not Recommended for New Design

Catalog

NRND = Not Recommended for New Design

Part	Power Dissipation (Max)	Vgs(th) (Max)	Current - Continuous Drain (Id) (Tc)	Rds On (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Grade	Input Capacitance (Ciss) (Max)	Vgs (Max)	Mounting Type	FET Type	Package / Case	Package Name	Drain to Source Voltage (Vdss)	Qualification	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Max)
Diodes Inc DMTH4001SPSQ-13	3.1 W 187.5 W	4 V	225 A	1 mOhm	MOSFET (Metal Oxide)	-55 °C	175 °C	Automotive	10787 pF	20 V	Surface Mount	N-Channel	8-PowerTDFN	PowerDI5060-8 (Type K)	40 V	AEC-Q101	10 V	144 nC 144 nC

Catalog

NRND = Not Recommended for New Design

Key Features

• Rated to +175°C – Ideal for High Ambient Temperature Environments

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Thermally Efficient Package-Cooler Running Applications

• High Conversion Efficiency

• Low RDS(ON) – Minimizes On State Losses

• <1.1mm Package Profile – Ideal for Thin Applications

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• The DMTH4001SPSQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a PPAP.