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IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 3.3 MOHM;
| Part | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | FET Type | Mounting Type | Power Dissipation (Max) [Max] | Supplier Device Package | Technology | Gate Charge (Qg) (Max) @ Vgs | Vgs(th) (Max) @ Id | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | 75 A | N-Channel | Through Hole | 300 W | TO-220AB | MOSFET (Metal Oxide) | 290 nC | 4 V | TO-220-3 | 10 V | -55 °C | 175 ░C | 3.3 mOhm | 7960 pF | 55 V |