TRANS 2NPN PREBIAS 0.1W US6
| Part | Package / Case | Voltage - Collector Emitter Breakdown (Max) [Max] | Vce Saturation (Max) @ Ib, Ic | Resistor - Base (R1) | Frequency - Transition | Current - Collector Cutoff (Max) [Max] | Supplier Device Package | Mounting Type | Transistor Type | Power - Max [Max] | Current - Collector (Ic) (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 6-TSSOP SC-88 SOT-363 | 50 V | 300 mV | 4.7 kOhms | 250 MHz | 100 nA | US6 | Surface Mount | 2 NPN - Pre-Biased (Dual) | 100 mW | 100 mA | 120 | ||
Toshiba Semiconductor and Storage | 6-TSSOP SC-88 SOT-363 | 50 V | 300 mV | 4.7 kOhms | 250 MHz | 100 nA | US6 | Surface Mount | 2 NPN - Pre-Biased (Dual) | 200 mW | 100 mA | 120 | AEC-Q101 | Automotive |
Toshiba Semiconductor and Storage | SOT-563 SOT-666 | 50 V | 300 mV | 4.7 kOhms | 250 MHz | 100 nA | ES6 | Surface Mount | 2 NPN - Pre-Biased (Dual) | 100 mW | 100 mA | 120 |