DMT6005LSS Series

60V N-Channel Enhancement Mode MOSFET

Catalog

60V N-Channel Enhancement Mode MOSFET

Part	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Power Dissipation (Max)	Power Dissipation (Max)	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Package / Case [y]	Package / Case [x]	Gate Charge (Qg) (Max) @ Vgs [Max]
Diodes Inc DMT6005LFG-13	POWERDI3333-8	2.5 V	3150 pF	18 A 100 A	N-Channel	-55 °C	150 °C	20 V	4.5 V 10 V	Surface Mount	62.5 W	1.98 W	MOSFET (Metal Oxide)	4.1 mOhm	60 V	8-PowerVDFN	48.7 nC
Diodes Inc DMT6005LSS-13	8-SO	3 V	2962 pF	13.5 A	N-Channel	-55 °C	150 °C	20 V	4.5 V 10 V	Surface Mount		1.3 W	MOSFET (Metal Oxide)	6 mOhm	60 V	8-SOIC		3.9 mm	0.154 in	47.1 nC
Diodes Inc DMT6005LFG-7	POWERDI3333-8	2.5 V	3150 pF	18 A 100 A	N-Channel	-55 °C	150 °C	20 V	4.5 V 10 V	Surface Mount	62.5 W	1.98 W	MOSFET (Metal Oxide)	4.1 mOhm	60 V	8-PowerVDFN	48.7 nC

Catalog

60V N-Channel Enhancement Mode MOSFET

Key Features

• 100% Unclamped Inductive Switching (UIS) Test in Production – Ensures More Reliable and Robust End Application

• Low RDS(ON)– Ensures On-State Losses are Minimized

• Small Form Factor Thermally Efficient Package Enables Higher Density End Products

• Occupies Just 33% of the Board Area Occupied by SO-8 Enabling Smaller End Product

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.