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OPTIMOS™ 3 N-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 PACKAGE; 13 MOHM;
| Part | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature [Min] | Operating Temperature [Max] | Vgs(th) (Max) @ Id [Max] | Technology | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Package / Case | Mounting Type | Drain to Source Voltage (Vdss) | FET Type | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs [Max] | Power Dissipation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 20 V | 1700 pF | -55 °C | 150 °C | 2.2 V | MOSFET (Metal Oxide) | 4.5 V 10 V | PG-TSDSON-8 | 8-PowerTDFN | Surface Mount | 30 V | N-Channel | 8.8 mOhm | 21 nC | 2.1 W 35 W |