GAN FET N-CH 650V PQFN
| Part | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | FET Type | Mounting Type | Vgs(th) (Max) @ Id | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Technology |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Transphorm TP65H150G4LSG | -55 °C | 150 °C | 180 mOhm | 3-PowerTDFN | 8 nC | 20 V | N-Channel | Surface Mount | 4.8 V | 650 V | 598 pF | 3-PQFN (8x8) | 52 W | 13 A | 10 V | GaNFET (Gallium Nitride) |