STGWT20IH125DF Series

Trench gate field-stop 650 V, 20 A high speed HB series IGBT

Catalog

Trench gate field-stop 650 V, 20 A high speed HB series IGBT

Part	Package / Case	Voltage - Collector Emitter Breakdown (Max)	Test Condition	Gate Charge	Current - Collector (Ic) (Max) [Max]	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Switching Energy	Mounting Type	Vce(on) (Max) @ Vge, Ic	IGBT Type	Supplier Device Package	Power - Max [Max]	Current - Collector Pulsed (Icm)	Td (on/off) @ 25°C	Td (on/off) @ 25°C
STMicroelectronics STGWT20H65FB	SC-65-3 TO-3P-3	650 V	10 Ohm 15 V 20 A 400 V	120 nC	40 A	30 ns	139 ns	-55 °C	175 ░C	77 µJ 170 µJ	Through Hole	2 V	Trench Field Stop	TO-3P	168 W	80 A
STMicroelectronics STGWT20IH125DF	SC-65-3 TO-3P-3		10 Ohm 15 A 15 V 600 V	68 nC	40 A			-55 °C	175 ░C	410 µJ	Through Hole	2.5 V	Trench Field Stop	TO-3P	259 W	80 A	-	106 ns

Catalog

Trench gate field-stop 650 V, 20 A high speed HB series IGBT

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.