TP65H150 Series
Manufacturer: Renesas Electronics Corporation
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GAN FET N-CH 650V PQFN
| Part | Vgs (Max) | Package Name | Package Width | Package Length | Power Dissipation (Max) | Vgs(th) (Max) | Package / Case | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) | Technology | Operating Temperature (Min) | Operating Temperature (Max) | FET Type | Current - Continuous Drain (Id) (Tc) | Rds On (Max) | Mounting Type | Gate Charge (Max) | Input Capacitance (Ciss) (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | 20 V | 3-PQFN | 8 mm | 8 mm | 52 W | 4.8 V | 3-PowerTDFN | 10 V | 650 V | GaNFET (Gallium Nitride) | -55 °C | 150 °C | N-Channel | 13 A | 180 mOhm | Surface Mount | 8 nC | 598 pF |
Renesas Electronics Corporation | 20 V | 3-PQFN | 8 mm | 8 mm | 52 W | 4.8 V | 3-PowerTDFN | 10 V | 650 V | GaNFET (Gallium Nitride) | -55 °C | 150 °C | N-Channel | 13 A | 180 mOhm | Surface Mount | 8 nC | 598 pF |