GT30J341 Series
IGBTs, 600 V/33 A IGBT, Built-in Diodes, TO-3P(N)
Manufacturer: Toshiba Semiconductor and Storage
Catalog
IGBTs, 600 V/33 A IGBT, Built-in Diodes, TO-3P(N)
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IGBTs, 600 V/33 A IGBT, Built-in Diodes, TO-3P(N)
IGBTs, 600 V/33 A IGBT, Built-in Diodes, TO-3P(N)
IGBTs, 600 V/33 A IGBT, Built-in Diodes, TO-3P(N)
| Part | Input Type | Operating Temperature | Power - Max | Package / Case | Mounting Type | Current - Collector (Ic) (Max) | Reverse Recovery Time (trr) | Td (on) @ 25°C | Td (off) @ 25°C | Package Name | Current - Collector Pulsed (Icm) | Switching Energy (Off) | Switching Energy (On) | Vce(on) (Max) | Voltage - Collector Emitter Breakdown (Max) | Test Condition Voltage | Test Condition Resistance | Test Condition Current | Test Condition Voltage (Secondary) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | Standard | 175 °C | 230 W | SC-65-3 TO-3P-3 | Through Hole | 59 A | 50 ns | 80 ns | 280 ns | TO-3P(N) | 120 A | 600 µJ | 800 µJ | 2 V | 600 V | 300 V | 24 Ohm | 30 A | 15 V |