IC NVSRAM 16KBIT PARALLEL 24EDIP
Part | Memory Size | Memory Interface | Supplier Device Package | Write Cycle Time - Word, Page [custom] | Write Cycle Time - Word, Page [custom] | Mounting Type | Memory Type | Technology | Memory Organization | Operating Temperature [Max] | Operating Temperature [Min] | Package / Case | Package / Case | Package / Case | Voltage - Supply [Min] | Voltage - Supply [Max] | Access Time | Memory Format | Write Cycle Time - Word, Page |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Analog Devices Inc./Maxim Integrated DS1220Y-100IND+ | 16 Kbit | Parallel | 24-EDIP | 100 ns | 100 ns | Through Hole | Non-Volatile | NVSRAM (Non-Volatile SRAM) | 2K x 8 | 85 °C | -40 °C | 0.6 in | 24-DIP Module | 15.24 mm | 4.5 V | 5.5 V | 100 ns | NVSRAM | |
Analog Devices Inc./Maxim Integrated DS1220Y-200+ | 16 Kbit | Parallel | 24-EDIP | Through Hole | Non-Volatile | NVSRAM (Non-Volatile SRAM) | 2K x 8 | 70 °C | 0 °C | 0.6 in | 24-DIP Module | 15.24 mm | 4.5 V | 5.5 V | 200 ns | NVSRAM | 200 ns | ||
Analog Devices Inc./Maxim Integrated DS1220Y-120+ | 16 Kbit | Parallel | 24-DIP | Through Hole | Non-Volatile | NVSRAM (Non-Volatile SRAM) | 2K x 8 | 70 °C | 0 °C | 0.6 in | 24-DIP Module | 15.24 mm | 4.5 V | 5.5 V | 120 ns | NVSRAM | 120 ns | ||
Analog Devices Inc./Maxim Integrated DS1220Y-200IND+ | 16 Kbit | Parallel | 24-EDIP | Through Hole | Non-Volatile | NVSRAM (Non-Volatile SRAM) | 2K x 8 | 85 °C | -40 °C | 0.6 in | 24-DIP Module | 15.24 mm | 4.5 V | 5.5 V | 200 ns | NVSRAM | 200 ns | ||
Analog Devices Inc./Maxim Integrated DS1220Y-100+ | 16 Kbit | Parallel | 24-EDIP | 100 ns | 100 ns | Through Hole | Non-Volatile | NVSRAM (Non-Volatile SRAM) | 2K x 8 | 70 °C | 0 °C | 0.6 in | 24-DIP Module | 15.24 mm | 4.5 V | 5.5 V | 100 ns | NVSRAM |