Dual N-Channel Enhancement Mode MOSFET
Dual N-Channel Enhancement Mode MOSFET
| Part | Grade | Qualification | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Power - Max [Max] | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | Configuration | Package / Case | Package / Case [y] | Package / Case [x] | Technology | Gate Charge (Qg) (Max) @ Vgs [Max] | Mounting Type | Vgs(th) (Max) @ Id | FET Type | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Diodes Inc | Automotive | AEC-Q101 | 6 A 14 A | 29 mOhm | -55 °C | 150 °C | 60 V | 1.2 W | 8-SO | 2110 pF | 2 N-Channel (Dual) | 8-SOIC | 3.9 mm | 0.154 in | MOSFET (Metal Oxide) | 32 nC | Surface Mount | 3 V | ||||||
Diodes Inc | 6.9 A | 29 mOhm | -55 °C | 150 °C | 60 V | 8-SOP | 8-SOIC | 3.9 mm | 0.154 in | MOSFET (Metal Oxide) | Surface Mount | 3 V | N-Channel | 14 nC | 20 V | 2110 pF | 2.1 W | 6 V 10 V |