DMN1032UCP4 Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Rds On (Max) @ Id, Vgs	Technology	Supplier Device Package	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)
Diodes Inc DMN1032UCP4-7	4-XFBGA DSBGA	-55 °C	150 °C	Surface Mount	1.8 V 4.5 V	790 mW	3.2 nC	N-Channel	28 mOhm	MOSFET (Metal Oxide)	X1-DSN1010-4 (Type B)	8 V	325 pF	1.2 V	5 A	12 V

Catalog

N-Channel Enhancement Mode MOSFET

Key Features

• LD-MOS Technology with the Lowest Figure of Merit:RDS(ON)= 18mΩ to Minimize On-State LossesQg= 3.2nC for Ultra-Fast Switching

• RDS(ON)= 18mΩ to Minimize On-State Losses

• Qg= 3.2nC for Ultra-Fast Switching

• VGS(th)= 8V Typ. for a Low Turn-On Potential

• CSP with Footprint 1.0mm × 1.0mm

• Height = 0.45mm for Low Profile

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/104/200, PPAP capable, and manufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.

Description

This 2ndgeneration Lateral MOSFET (LD-MOS) is engineered to minimize on-state losses and switch ultra-fast, making it ideal for high efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal RDS(ON)per footprint area.