SI4963 Series

Catalog

MOSFET 2P-CH 20V 4.9A 8SOIC

Part	Power - Max	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id)	Package Name	FET Feature	Vgs(th) (Max)	Rds On (Max)	Channel Count	Configuration	Configuration - Features	Package Length	Package Width	Mounting Type	Gate Charge (Max)
Vishay Dale SI4963BDY-T1-E3	1.1 W	MOSFET (Metal Oxide)	-55 °C	150 °C	20 V	4.9 A	8-SOIC	Logic Level Gate	1.4 V	32 mOhm	2	P-Channel	Dual	0.154 in	3.9 mm	Surface Mount	21 nC
Vishay Dale SI4963BDY-T1-GE3	1.1 W	MOSFET (Metal Oxide)	-55 °C	150 °C	20 V	4.9 A	8-SOIC	Logic Level Gate	1.4 V	32 mOhm	2	P-Channel	Dual	0.154 in	3.9 mm	Surface Mount	21 nC