YQ3LAM10D Series

Trench MOS Structure, 100V, 3A, PMDTM, Highly Efficient SBD

Catalog

Trench MOS Structure, 100V, 3A, PMDTM, Highly Efficient SBD

Part	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction	Package / Case	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Speed	Capacitance @ Vr, F	Mounting Type	Technology
Rohm Semiconductor YQ3LAM10DTR	PMDTM	640 mV	100 V	175 °C	SOD-128	3 A	30 µA	200 mA, 500 ns	140 pF	Surface Mount	Schottky

Catalog

Trench MOS Structure, 100V, 3A, PMDTM, Highly Efficient SBD

Key Features

• High reliability, Small power mold type, Low VFand low IR, Low capacitance

Description

The YQ30NL10SDFH is a highly efficient Schottky Barrier Diode that is designed improving the tradeoff between low VFand low IR. While its low VFit achieves stable operation at high temperatures. Ideal for switching power supplies, freewheel diodes, and reverse polarity protection applications.