SIDC11 Series
Manufacturer: INFINEON
DIODE SIL CARB 600V 4A WAFER
| Part | Voltage - DC Reverse (Vr) (Max) | Package / Case | Operating Temperature - Junction (Max) | Operating Temperature - Junction (Min) | Mounting Type | Technology | Reverse Recovery Time (trr) | Package Name | Current - Reverse Leakage | Voltage - Forward (Vf) (Max) | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Current - Average Rectified (Io) | Capacitance |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
INFINEON | 600 V | Die | 175 °C | -55 °C | Surface Mount | SiC (Silicon Carbide) Schottky | 0 ns | Sawn on foil | 200 µA | 1.9 V | 500 mA | No Recovery Time | 500 mA 500 mA | 4 A | 150 pF |