MOSFET N-CH 100V 50A TO263
| Part | Input Capacitance (Ciss) (Max) @ Vds | Technology | FET Type | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Mounting Type | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Vgs(th) (Max) @ Id | Supplier Device Package | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay Siliconix SUM70090E-GE3 | 1950 pF | MOSFET (Metal Oxide) | N-Channel | 50 A | 100 V | 8.9 mOhm | 125 W | Surface Mount | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB | -55 °C | 175 ░C | 50 nC | 10 V | 7.5 V | 4 V | TO-263 (D2PAK) | 20 V |