MOSFET N-CH 100V 50A TO263
| Part | Input Capacitance (Ciss) (Max) @ Vds | Technology | FET Type | Current - Continuous Drain (Id) @ 25°C | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Power Dissipation (Max) | Mounting Type | Package / Case | Operating Temperature [Min] | Operating Temperature [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Vgs(th) (Max) @ Id | Supplier Device Package | Vgs (Max) | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division  | 1950 pF  | MOSFET (Metal Oxide)  | N-Channel  | 50 A  | 100 V  | 8.9 mOhm  | 125 W  | Surface Mount  | D2PAK (2 Leads + Tab)  TO-263-3  TO-263AB  | -55 °C  | 175 ░C  | 50 nC  | 10 V  | 7.5 V  | 4 V  | TO-263 (D2PAK)  | 20 V  |