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20 V, P-channel Trench MOSFET
Description
AI
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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20 V, P-channel Trench MOSFET
20 V, P-channel Trench MOSFET
| Part | Rds On (Max) | Mounting Type | Vgs (Max) | Drive Voltage (Max Rds On) | Drive Voltage (Min Rds On) | Gate Charge (Max) | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) | Current - Continuous Drain (Id) (Ta) | Current - Continuous Drain (Id) (Tc) | Technology | Package Name | Operating Temperature (Min) | Operating Temperature (Max) | Vgs(th) (Max) | Drain to Source Voltage (Vdss) | FET Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 20 mOhm | Surface Mount | 12 V | 2.5 V | 4.5 V | 29.1 nC | 1.7 W 15 W | 1900 pF | 8 A | 23.5 A | MOSFET (Metal Oxide) | MLPAK33 | -55 °C | 150 °C | 1.25 V | 20 V | P-Channel | 8-PowerVDFN |