Catalog
600V 6A TO-252, High-speed switching Power MOSFET
Description
AI
R6006KND3 is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
600V 6A TO-252, High-speed switching Power MOSFET
| Part | Package Name | Input Capacitance (Ciss) (Max) | Rds On (Max) | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) (Tc) | Gate Charge (Max) | Drain to Source Voltage (Vdss) | FET Type | Vgs(th) (Max) | Operating Temperature | Vgs (Max) | Technology | Package / Case | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | TO-252 | 350 pF | 830 mOhm | 70 W | 10 V | 6 A | 12 nC | 600 V | N-Channel | 5.5 V | 150 °C | 20 V | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | Surface Mount |