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30 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN0606-3 (SOT8001) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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30 V, N-channel Trench MOSFET
30 V, N-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) (Ta) | Qualification | Power Dissipation (Max) | Input Capacitance (Ciss) (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | Vgs(th) (Max) | Drain to Source Voltage (Vdss) | Package Name | Mounting Type | Technology | Grade | Operating Temperature (Min) | Operating Temperature (Max) | Vgs (Max) | FET Type | Package / Case | Rds On (Max) | Gate Charge (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 770 mA | AEC-Q101 | 380 mW | 30.3 pF | 4.5 V | 1.5 V | 950 mV | 30 V | DFN0606-3 | Surface Mount | MOSFET (Metal Oxide) | Automotive | -55 °C | 150 °C | 8 V | N-Channel | 3-XFDFN | 670 mOhm | 0.4 nC |