Beta
⌘K
IR MOSFET™ P-CHANNEL ; D2PAK TO-263 PACKAGE; 290 MOHM;
| Part | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Vgs (Max) | Package / Case | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Vgs(th) (Max) @ Id | Mounting Type | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 66 nC | 290 mOhm | 20 V | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | MOSFET (Metal Oxide) | -55 °C | 175 ░C | 13 A | D2PAK | 4 V | Surface Mount | P-Channel | 860 pF | 10 V | 150 V |