RJK03P9DPA Series
Manufacturer: Renesas Electronics Corporation
Beta
⌘K
BUILT IN SBD DUAL N-CHANNEL POWER MOSFET
| Part | Rds On (Max) | Package Name | Input Capacitance (Ciss) (Max) | FET Feature | FET Feature Drive Voltage | Operating Temperature | Power - Max (Value 1) | Power - Max (Value 2) | Mounting Type | Channel Count | Configuration - Features | Configuration | Current - Continuous Drain (Id) (Maximum) | Current - Continuous Drain (Id) (Typical) | Package / Case | Technology | Gate Charge (Max) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | 7 mOhm | 8-WPAK | 1660 pF | Logic Level Gate | 4.5 V | 150 °C | 15 W | 35 W | Surface Mount | 2 | Half Bridge | N-Channel | 50 A | 20 A | 8-WFDFN Exposed Pad | MOSFET (Metal Oxide) | 7.7 nC | 30 V |