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60 V, N-channel Trench MOSFET
Description
AI
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT8002-3 (MLPAK33) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
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60 V, N-channel Trench MOSFET
60 V, N-channel Trench MOSFET
| Part | Gate Charge (Max) | Package Name | Input Capacitance (Ciss) (Max) | Power Dissipation (Max) | Vgs (Max) | Current - Continuous Drain (Id) (Tc) | Mounting Type | Qualification | Vgs(th) (Max) | Drive Voltage (Min Rds On) | Drive Voltage (Max Rds On) | FET Type | Technology | Operating Temperature (Max) | Operating Temperature (Min) | Package / Case | Rds On (Max) | Drain to Source Voltage (Vdss) | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Nexperia USA Inc. | 18 nC | MLPAK33 | 660 pF | 27 W | 20 V | 21 A | Surface Mount Wettable Flank | AEC-Q101 | 2.1 V | 10 V | 4.5 V | N-Channel | MOSFET (Metal Oxide) | 175 °C | -55 °C | 8-PowerVDFN | 29 mOhm | 60 V | Automotive |