IRF6641 Series
Manufacturer: INFINEON
Beta
⌘K
IR MOSFET™ N-CHANNEL POWER MOSFET ; DIRECTFET™ M PACKAGE; 59.9 MOHM;
| Part | Operating Temperature (Min) | Operating Temperature (Max) | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) | Vgs (Max) | Rds On (Max) | Package / Case | Vgs(th) (Max) | Mounting Type | Current - Continuous Drain (Id) (Ta) | Power Dissipation (Max) | Package Name | Technology | Gate Charge (Max) | FET Type | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 INFINEON | -40 °C | 150 °C | 200 V | 2290 pF | 20 V | 59.9 mOhm | DirectFET™ Isometric MZ | 4.9 V | Surface Mount | 4.6 A | 2.8 W 89 W | DIRECTFET™ MZ | MOSFET (Metal Oxide) | 48 nC 48 nC | N-Channel | 10 V |
INFINEON | -40 °C | 150 °C | 200 V | 2290 pF | 20 V | 59.9 mOhm | DirectFET™ Isometric MZ | 4.9 V | Surface Mount | 4.6 A | 2.8 W 89 W | DIRECTFET™ MZ | MOSFET (Metal Oxide) | 48 nC 48 nC | N-Channel | 10 V |