DMN4020LFDEQ Series

40V N-Channel Enhancement Mode MOSFET

Catalog

40V N-Channel Enhancement Mode MOSFET

Part	Drain to Source Voltage (Vdss)	Technology	Package / Case	Vgs(th) (Max) @ Id	Vgs (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	FET Type	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Grade	Qualification	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]
Diodes Inc DMN4020LFDE-7	40 V	MOSFET (Metal Oxide)	6-PowerUDFN	2.4 V	20 V	Surface Mount	19.1 nC	8 A	N-Channel	660 mW	-55 °C	150 °C	U-DFN2020-6 (Type E)	4.5 V 10 V	1060 pF	20 mOhm
Diodes Inc DMN4020LFDE-13	40 V	MOSFET (Metal Oxide)	6-PowerUDFN	2.4 V	20 V	Surface Mount	19.1 nC	8 A	N-Channel	660 mW	-55 °C	150 °C	U-DFN2020-6 (Type E)	4.5 V 10 V	1060 pF	20 mOhm
Diodes Inc DMN4020LFDEQ-7	40 V	MOSFET (Metal Oxide)	6-PowerUDFN	2.4 V	20 V	Surface Mount		8.6 A	N-Channel		-55 °C	150 °C	U-DFN2020-6 (Type E)	4.5 V 10 V	1201 pF	21 mOhm	Automotive	AEC-Q101	850 mW	25.3 nC

Catalog

40V N-Channel Enhancement Mode MOSFET

Key Features

• 0.6mm Profile – Ideal for Low Profile Applications

• PCB Footprint of 4mm2

• Low Gate Threshold Voltage

• Low On-Resistance

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen- and Antimony-Free. "Green" Device (Note 3)

• The DMN4020LFDEQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.https://www.diodes.com/quality/product-definitions/

Description

This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.