Catalog
650V, 10A, THD, Silicon-carbide (SiC) SBD
Description
AI
Switching loss reduced, enabling high-speed switching.
Beta
⌘K
650V, 10A, THD, Silicon-carbide (SiC) SBD
650V, 10A, THD, Silicon-carbide (SiC) SBD
| Part | Voltage - DC Reverse (Vr) (Max) | Reverse Recovery Time (trr) | Current - Reverse Leakage | Package / Case | Speed - Fast Recovery (Minimum) | Speed | Speed - Recovery Current | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) | Mounting Type | Capacitance | Operating Temperature - Junction | Technology | Package Name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 650 V | 0 ns | 50 µA | TO-220-2 | 500 mA | No Recovery Time | 500 mA 500 mA | 10 A | 1.5 V | Through Hole | 500 pF | 175 °C | SiC (Silicon Carbide) Schottky | TO-220ACFP |