DMT6004SCT Series

N-Channel Enhancement Mode MOSFET

Catalog

N-Channel Enhancement Mode MOSFET

Part	Mounting Type	Package / Case	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Technology	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs
Diodes Inc DMT6004SCT	Through Hole	TO-220-3	3.65 mOhm	2.3 W 113 W	10 V	100 A	TO-220-3	60 V	-55 °C	150 °C	MOSFET (Metal Oxide)	N-Channel	4 V	4556 pF	20 V	95.4 nC

N-Channel Enhancement Mode MOSFET

• 100% Unclamped Inductive Switching – Ensures More Reliable and Robust End Application

• Low Input Capacitance

• Low Input/Output Leakage

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. "Green" Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

This new generation MOSFET features low on-resistance and fast switching, making it ideal for high-efficiency power management applications.