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MOSFET N-CH 80V 100A TO262-3
| Part | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Technology | Input Capacitance (Ciss) (Max) @ Vds [Max] | Package / Case | Rds On (Max) @ Id, Vgs [Max] | Supplier Device Package | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) [Max] | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs | Drain to Source Voltage (Vdss) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies | 3.5 V | 100 A | MOSFET (Metal Oxide) | 14200 pF | I2PAK TO-262-3 Long Leads TO-262AA | 2.8 mOhm | PG-TO262-3 | -55 °C | 175 ░C | 300 W | Through Hole | 6 V 10 V | 20 V | 206 nC | 80 V | N-Channel |