MOSFET 2P-CH 30V 9A 8SOIC
| Part | Operating Temperature [Min] | Operating Temperature [Max] | FET Feature | Vgs(th) (Max) @ Id | Technology | Rds On (Max) @ Id, Vgs [Max] | Configuration | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Mounting Type | Package / Case | Package / Case [y] | Package / Case [x] | Input Capacitance (Ciss) (Max) @ Vds | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Power - Max [Max] | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc. AO4805L_101 | -55 °C | 150 °C | Logic Level Gate | 2.8 V | MOSFET (Metal Oxide) | 19 mOhm | 2 P-Channel | 30 V | 9 A | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 2600 pF | 8-SOIC | 39 nC | 2 W | ||
Alpha & Omega Semiconductor Inc. AO4800BL | -55 °C | 150 °C | 1.5 V | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | 30 V | 6.9 A | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 1100 pF | 8-SOIC | 1.9 W | 27 mOhm | 12 nC | |||
Alpha & Omega Semiconductor Inc. AO4807L_102 | -55 °C | 150 °C | 2.4 V | MOSFET (Metal Oxide) | 35 mOhm | 2 P-Channel | 30 V | 6 A | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 760 pF | 8-SOIC | 2 W | 16 nC | |||
Alpha & Omega Semiconductor Inc. AO4801 | -55 °C | 150 °C | 1.3 V | MOSFET (Metal Oxide) | 2 P-Channel | 30 V | 5 A | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 645 pF | 8-SOIC | 2 W | 7 nC | ||||
Alpha & Omega Semiconductor Inc. AO4805 | -55 °C | 150 °C | Logic Level Gate | 2.8 V | MOSFET (Metal Oxide) | 19 mOhm | 2 P-Channel | 30 V | 9 A | Surface Mount | 8-SOIC | 3.9 mm | 0.154 in | 2600 pF | 8-SOIC | 39 nC | 2 W |