MOSFET 2P-CH 30V 9A 8SOIC
| Part | Technology | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs [Max] | Package / Case | Package / Case [y] | Package / Case [x] | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | FET Feature | Mounting Type | Supplier Device Package | Configuration | Drain to Source Voltage (Vdss) | Power - Max [Max] | Operating Temperature [Min] | Operating Temperature [Max] | Rds On (Max) @ Id, Vgs | Gate Charge (Qg) (Max) @ Vgs | 
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Alpha & Omega Semiconductor Inc.  | MOSFET (Metal Oxide)  | 9 A  | 2600 pF  | 19 mOhm  | 8-SOIC  | 3.9 mm  | 0.154 in  | 39 nC  | 2.8 V  | Logic Level Gate  | Surface Mount  | 8-SOIC  | 2 P-Channel  | 30 V  | 2 W  | -55 °C  | 150 °C  | ||
Alpha & Omega Semiconductor Inc.  | MOSFET (Metal Oxide)  | 6.9 A  | 1100 pF  | 8-SOIC  | 3.9 mm  | 0.154 in  | 1.5 V  | Surface Mount  | 8-SOIC  | 2 N-Channel (Dual)  | 30 V  | 1.9 W  | -55 °C  | 150 °C  | 27 mOhm  | 12 nC  | |||
Alpha & Omega Semiconductor Inc.  | MOSFET (Metal Oxide)  | 5 A  | 645 pF  | 8-SOIC  | 3.9 mm  | 0.154 in  | 1.3 V  | Surface Mount  | 8-SOIC  | 2 P-Channel  | 30 V  | 2 W  | -55 °C  | 150 °C  | 7 nC  | ||||
Alpha & Omega Semiconductor Inc.  | MOSFET (Metal Oxide)  | 9 A  | 2600 pF  | 19 mOhm  | 8-SOIC  | 3.9 mm  | 0.154 in  | 39 nC  | 2.8 V  | Logic Level Gate  | Surface Mount  | 8-SOIC  | 2 P-Channel  | 30 V  | 2 W  | -55 °C  | 150 °C  |