HIP6601 Series
Manufacturer: Renesas Electronics Corporation
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IC GATE DRVR HALF-BRIDGE 8SOIC
| Part | Gate Type | Voltage - Supply (Minimum) | Voltage - Supply (Maximum) | Number of Drivers | Operating Temperature (Max) | Operating Temperature (Min) | Channel Type | Mounting Type | Driven Configuration | Input Type | Gate Channel | High Side Voltage - Max (Bootstrap) | Package Name | Rise Time (Typ) | Fall Time (Typ) | Package Length | Package Width | Package Features |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Renesas Electronics Corporation | MOSFET N-Channel MOSFET | 10.8 VDC | 13.2 V | 2 | 125 °C | 0 °C | Synchronous | Surface Mount | Half-Bridge | Non-Inverting | N-Channel | 15 V | 8-SOIC | 20 ns | 20 ns | 0.154 in | 3.9 mm | |
 Renesas Electronics Corporation | MOSFET N-Channel MOSFET | 10.8 VDC | 13.2 V | 2 | 125 °C | 0 °C | Synchronous | Surface Mount | Half-Bridge | Non-Inverting | N-Channel | 15 V | 8-SOIC 8-SOIC-EP | 20 ns | 20 ns | 0.154 in | 3.9 mm | Exposed Pad |