TRANS 2PNP PREBIAS 0.2W US6
| Part | Transistor Type | Supplier Device Package | Vce Saturation (Max) @ Ib, Ic | Resistor - Base (R1) | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Mounting Type | Resistor - Emitter Base (R2) | Current - Collector (Ic) (Max) [Max] | Power - Max [Max] | Current - Collector Cutoff (Max) [Max] | Voltage - Collector Emitter Breakdown (Max) [Max] | Frequency - Transition | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 2 PNP - Pre-Biased (Dual) | US6 | 300 mV | 4.7 kOhms | 30 | Surface Mount | 4700 Ohms | 100 mA | 200 mW | 100 nA | 50 V | 200 MHz | 6-TSSOP SC-88 SOT-363 |
Toshiba Semiconductor and Storage | 2 PNP - Pre-Biased (Dual) | US6 | 300 mV | 4.7 kOhms | 30 | Surface Mount | 4700 Ohms | 100 mA | 200 mW | 500 nA | 50 V | 200 MHz | 6-TSSOP SC-88 SOT-363 |