Beta
⌘K
TRANS 2NPN PREBIAS 0.1W ES6
| Part | Supplier Device Package | Voltage - Collector Emitter Breakdown (Max) [Max] | Current - Collector Cutoff (Max) [Max] | Power - Max [Max] | Vce Saturation (Max) @ Ib, Ic | Transistor Type | Resistor - Base (R1) | Current - Collector (Ic) (Max) [Max] | Mounting Type | Frequency - Transition | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Package / Case | Resistor - Emitter Base (R2) | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | ES6 | 50 V | 100 nA | 100 mW | 300 mV | 2 NPN - Pre-Biased (Dual) | 47 kOhms | 100 mA | Surface Mount | 250 MHz | 80 | SOT-563 SOT-666 | 47000 Ohms | ||
Toshiba Semiconductor and Storage | US6 | 50 V | 500 nA | 200 mW | 300 mV | 2 NPN - Pre-Biased (Dual) | 47 kOhms | 100 mA | Surface Mount | 250 MHz | 80 | 6-TSSOP SC-88 SOT-363 | 47000 Ohms | AEC-Q101 | Automotive |