STGW25M120DF3 Series

Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

Catalog

Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

Part	Switching Energy	Td (on/off) @ 25°C	Mounting Type	Current - Collector (Ic) (Max)	Package / Case	Current - Collector Pulsed (Icm)	Operating Temperature [Min]	Operating Temperature [Max]	Test Condition	IGBT Type	Vce(on) (Max) @ Vge, Ic	Supplier Device Package	Reverse Recovery Time (trr)	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Td (on/off) @ 25°C
STMicroelectronics STGW25S120DF3	2.37 mJ 830 µJ	31 ns 147 ns	Through Hole	50 A	TO-247-3	100 A	-55 °C	175 ░C	15 V 15 Ohm 25 A 600 V	Trench Field Stop	2.1 V	TO-247-3	265 ns	80 nC	1200 V	375 W
STMicroelectronics STGW25M120DF3	1.3 mJ 850 µJ	28 ns	Through Hole	50 A	TO-247-3	100 A	-55 °C	175 ░C	15 V 15 Ohm 25 A 600 V	Trench Field Stop	2.3 V	TO-247-3	265 ns	85 nC	1200 V	375 W	150 ns
STMicroelectronics STGW25H120F2	600 µJ 700 µJ	29 ns 130 ns	Through Hole	50 A	TO-247-3	100 A	-55 °C	175 ░C	10 Ohm 15 V 25 A 600 V	Trench Field Stop	2.6 V	TO-247-3		100 nC	1200 V	375 W

Catalog

Trench gate field-stop IGBT, H series 1200 V, 25 A high speed

Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.