DMTH4M70SPGW Series

40V +175°C N-Channel Enhancement Mode MOSFET PowerDI8080-5

Catalog

40V +175°C N-Channel Enhancement Mode MOSFET PowerDI8080-5

Part	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Package / Case	FET Type	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Technology	Power Dissipation (Max)	Vgs (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type
Diodes Inc DMTH4M70SPGW-13	10053 pF	-55 °C	175 ░C	4 V	SOT-1235	N-Channel	40 V	460 A	10 V	0.7 mOhm	MOSFET (Metal Oxide)	5.6 W 428 W	20 V	PowerDI8080-5	117.1 nC	Surface Mount

Catalog

40V +175°C N-Channel Enhancement Mode MOSFET PowerDI8080-5

Key Features

• Rated to +175°C – Ideal for High Ambient TemperatureEnvironments

• 100% Unclamped Inductive Switching (UIS) Test in Production—Ensures More Reliable and Robust End Application

• High Conversion Efficiency

• Low RDS(ON)—Minimizes Power Losses

• Wettable Flank for Improved Optical Inspection

• Fast Switching Speed

• Low Input Capacitance

• Lead-Free Finish; RoHS Compliant

• Halogen and Antimony Free. "Green" Device

• For automotive applications requiring specific change control(i.e. parts qualified to AEC-Q100/101/200, PPAP capable, andmanufactured in IATF 16949 certified facilities), pleasecontact usor your local Diodes representative.https://www.diodes.com/quality/product-definitions/

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high efficiency power management applications.